主讲人：Evgeny Gusev

时间：2023年11月15日（周三）上午10:00

地点：中心校区半导体研发大楼第一会议室

报告摘要

The report is focused on surface preparation of silicon carbide substrates using electron beam processing (EBP). Wafer output characteristics are discussed in term of roughness and subsurface damage layer. Describing this approach, mechanism of electron beam processing for polishing wafers is explained. Some experience data on electron beam processing of {0001} 6H-SiC and its polishing effect are shown. Based on the obtained results, it is assumed that it is possible to replace several stages of chemical-mechanical polishing with only one EBP stage. Experimental data on synthesis of graphene-like layers on silicon carbide by EBP are presented as addition.

个人简介

Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering.Medal and Diploma of the Ministry of Education of the Russian Federation.Scientific interests: Micro- and nanofabrication technologies, technology of microelectromechanical systems, microelectronic sensors.Author (or co-author) of more than 150 publications and 3 monographs, 5 patents.Participant and leader of projects supported by RFBR, Federal Targeted Programmes, Ministry of Education and Science of the Russian Federation grants.

Since 2010 Associate Professor, Department of Nanotechnologies and Microsystems, Southern Federal University, Taganrog, Russia.Since 2013 Head of Plasma Nanotechnology Laboratory, Research and Education Center "Nanotechnologies", Southern Federal University.Since 2019 Head of the bachelor study program "Nanoengineering" at Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia.